| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Monday Sessions |
| Session GR+EM+NS+PS+SS+TF-MoM |
| Session: | Growth of 2D Materials |
| Presenter: | H. Lim, RIKEN, Japan |
| Authors: | H. Lim, RIKEN, Japan Y. Kim, RIKEN, Japan |
| Correspondent: | Click to Email |
Chemical vapor deposition on a Cu surface is one of the feasible methods for industrial applications, because large-area monolayer graphene film can be achieved.1 However, grain boundaries and wrinkle formation in the graphene film are known to reduce the electrical performance of graphene. An atomic scale understanding of the growth mechanism on a Cu substrate is therefore of great importance for the synthesis of higher-quality graphene films.
Herein, we present the direction-selective growth of epitaxial graphene (EG) on a Cu(111) surface. All EGs had an identical R0o rotational angle with respect to the lattice direction of Cu(111), although it is distinguished from the general understanding that graphene grown on weakly-interacting metal surfaces generally shows various rotation angles.2 The EG growth mechanism was also elucidated with microscopic evidence of characteristic step edge formation of the Cu layers underneath individual EGs. We also observed various kinds of Moiré patterns in EGs with an identical rotational angle. The variety of Moiré patterns, even with an identical rotational angle, cannot be explained by conventional analysis showing that different rotational angles induce the different types of Moiré patterns. We suggest a “compressive strain” effect to explain the various Moiré superstructures observed in the atomically-resolved STM images.
1. Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; Banerjee, S. K.; Colombo, L.; Ruoff, R. S. Science 2009, 324, (5932), 1312-1314.
2. Batzill, M. Surf. Sci. Rep. 2012, 67, (3-4), 83-115.