| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM2-ThA |
| Session: | Non-traditional Inorganic Semiconductors |
| Presenter: | D.O. Scanlon, University College London, UK |
| Correspondent: | Click to Email |
The drive to replace indium in optoelectronic devices, and to move away from toxic materials such as CdTe in photovoltaics has focused attention on semiconductors featuring affordable and abundant elements. Recently, both ZnSnP2 and ZnSnN2 have emerged as leading candidates for earth abundant photovoltaics.[1,2] In this presentation we discuss the electronic structure and defect chemistry of these two materials, and specifically the role of intrinsic defects in controlling the native conductivity. The possibility of tuning the polarity of the conductivity by varying growth environments or via incorporation of extrinsic impurities will also be discussed.
1) [1] D. O. Scanlon and A. Walsh, “Bandgap engineering of ZnSnP2 for high efficiency solar cells”, Applied Physics Letters, 100, 251911 (2012)
2) [2] N. Feldberg, B. Keen, J. D. Aldous, D. O. Scanlon, P. A. Stampe, R. J. Kennedy, R. J. Reeves, T. D. Veal and S. M. Durbin, “ZnSnN2: A new earth-abundant element semiconductor for solar cells”, Photovoltaic Specialists Conference, 38, 002524 (2012)