AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuA

Invited Paper EM-TuA7
High Efficiency, Durable Quantum-Dot Hybrid Light-Emitting Diodes

Tuesday, October 29, 2013, 4:00 pm, Room 102 A

Session: Evolution of Electronic Materials and the AVS
Presenter: P. Holloway, University of Florida
Authors: P. Holloway, University of Florida
Y. Zheng, NanoPhotonica
L. Qian, NanoPhotonica
Y. Yang, NanoPhotonica
A. Titov, NanoPhotonica
J. Hyvonen, NanoPhotonica
W. Cao, University of Florida
J. Xue, University of Florida
Correspondent: Click to Email
Colloidal quantum-dot based hybrid light-emitting diodes (QD-LEDs) that exhibit record high efficiencies, long lifetimes, solution processability, color tunability and narrow emission bandwidths are reported. The devices exhibit world record quantum dot current and power efficiency of 3.2 cd/A and 2.1 lm/W for blue (B), 60 cd/A and 54 lm/W for green (G), and 15 cd/Aand 18 lm/W for red (R) emission. With exceptional good lifetimes, these QD-LEDs are extremely promising for flat panel display applications. The record efficiencies result from the use of a polymer hole transport layer (HTL) and a zinc oxide nanoparticles electron transport layer (ETL) sandwiching the quantum dot emitting layer (EML). The size and composition of the QDs were controlled during the synthesis process to emit at B, G or R wavelengths. We report all-inorganic QD-LEDs by using either vacuum deposited or solution processed MoO3 as the HTL. Improved device performance can be achieved by engineering the interface between the hole injection and QD layers, as will be described.