AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP4
Study of Phosphorus-doped Polysilicon Films using Si3H8 by Ultra-high Vacuum Chemical Vapor Deposition

Thursday, October 31, 2013, 6:00 pm, Room Hall B

Session: Electronic Materials and Processing Poster Session
Presenter: B. Kim, Yonsei University, Republic of Korea
Authors: B. Kim, Yonsei University, Republic of Korea
H. Jang, Yonsei University, Republic of Korea
D.-S. Byeon, Yonsei University, Republic of Korea
S. Koo, Yonsei University, Republic of Korea
D.-H. Ko, Yonsei University, Republic of Korea
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In situ phosphorus-doped polysilicon films grown on silicon oxide layers using trisilane (Si3H8) and phosphine (PH3) as precursors were investigated as a function of Si3H8/PH3 gas flow ratio and growth temperature. At high flow rate of Si3H8 the deposition process was controlled by the rate of desorption of hydrogen molecules on the surface, which has an activation energy of 1.13 eV, in the temperature range of 600 ~ 700 °C. In comparison, the deposition was limited by the diffusion of Si3H8 gas to the surface in the case of low Si3H8 flow rate for growth temperatures of > 650 °C. The presence of phosphorus decreased the crystallization temperature of polysilicon layers during growth. In addition, the ratio of phosphorus incorporated into the polysilicon at the same Si3H8/PH3 ratio decreased with increasing growth temperature. The results of sheet resistance measurements suggest that the resistivity of phosphorus-doped polysilicon films decreased with increasing deposition temperature at the same phosphorus concentration, indicating that the use of a high growth temperature results in an enhancement in the activation of phosphorus in the polysilicon films during growth.