AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP2
Effect of Co-implantation of Nitrogen and Fluorine on the Total Dose Radiation Response of the Buried Oxide Layer of SOI Materials

Thursday, October 31, 2013, 6:00 pm, Room Hall B

Session: Electronic Materials and Processing Poster Session
Presenter: Z.S. Zheng, Institute of Microelectronics of Chinese Academy of Sciences, China
Correspondent: Click to Email
In order to suppress the total dose radiation response of the buried oxide layer of silicon-on-insulator (SOI) materials, the method of co-implantation of nitrogen and fluorine into the buried oxide is used by fluorine implantation into the nitrogen-implanted buried oxide. The total dose radiation response of the modified buried oxide layer is characterized by the capacitance–voltage (C–V ) technique after irradiation using a Co-60 source. The results show the radiation hardness differences between the co-implanted buried oxide layers and the nitrogen-implanted ones, and the improved radiation tolerance for the modified buried oxide layer under some conditions, compared to the unmodified one. It is also found that there is a negligible annealing effect for the co-implanted buried oxide at a temperature of 150oC after irradiation. All the results have been discussed and analyzed.