AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP13
Characterization of Non-Stoichiometric Zinc Tungstate Thin Films

Thursday, October 31, 2013, 6:00 pm, Room Hall B

Session: Electronic Materials and Processing Poster Session
Presenter: S.T. King, University of Wisconsin - La Crosse
Authors: S.T. King, University of Wisconsin - La Crosse
E.M. Dinauer, University of Wisconsin - La Crosse
J.S. Krueger, University of Wisconsin - La Crosse
B.R. Zink, University of Wisconsin - La Crosse
Z.C. Koop, University of Wisconsin - La Crosse
Correspondent: Click to Email

Zinc tungstate (ZnWO4) has recently gained much attention for its possible uses in photocatalysis and photovoltaic applications [1,2]. While many studies have focused on the fabrication and characterization of nanoscale structures of this material, few have investigated the properties of zinc tungstate thin films. Fewer have explored the properties of non-stoichiometric zinc tungstate materials.

The current study presents preliminary results on the structural, optical, and electronic properties of non-stoichiometric zinc tungstate thin-films fabricated using reactive DC sputter deposition. Such Zn1-xWxO4 have been investigated in the parameter space from x = 0 to 0.5. The initial results of these studies suggest that the properties of zinc tungstate are strongly dependent on the quantity of W incorporated into the film. Therefore, the physical properties of zinc tungstate may be tailored for specific applications by employing such non-stoichiometric materials.

References:

[1] C. J. Spengler and S. O’Hara, Applied Optics, 3,1084-1085 (1964)

[2] J. Lin, J. Lin, and Y. Zhu, Inorg. Chem., 46, 8372−8378 (2007)