| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | A. Benítez, Benemérita Universidad Autónoma de Puebla, Mexico |
| Authors: | A. Benítez, Benemérita Universidad Autónoma de Puebla, Mexico J.A.L Luna, Benemérita Universidad Autónoma de Puebla, Mexico G. García, Benemérita Universidad Autónoma de Puebla, Mexico D. Vázquez, Benemérita Universidad Autónoma de Puebla, Mexico J. Carrillo, Benemérita Universidad Autónoma de Puebla, Mexico K. Monfil, Benemérita Universidad Autónoma de Puebla, Mexico A. Morales, Centro de Investigación en Materiales Avanzados, Mexico |
| Correspondent: | Click to Email |
Silicon Rich oxides have been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Hot-fire Chemical Vapor Deposition (HFCVD). Obtain silicon compatible material with an optimal photoluminescence response is important for to have optoelectronic functions. The SiOx has shown to have a very good photoluminescence response and is also compatible with silicon technology. In this works, SiOx Films were obtained by hot fire chemical vapor deposition (HF-CVD) with different deposit conditions. The hydrogen flows were changing of: 50, 75, 100, and 125 and 150 sccm, and the range of deposit temperature were from 800 to 1000°C. The compositional and optical properties of the SiOx films were obtained using fourier transformed infrared spectroscopy (FTIR), photoluminescence (PL), Transmittance and perfilometer. The IR absorption spectrum shows the presence of three typical Si–O–Si vibrations modes in SiO2 also the change of the morphology. At 75 and 100sccm showed the most intense PL. Transmittance spectra showed a wavelength shift of the absorption border from 350 to 450nm. We have analyzed the dependence of PL on the composition of non-stoichiometric SiOx films.