| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Monday Sessions |
| Session EM+TF-MoM |
| Session: | High-k Gate Oxides for High Mobility Semiconductors I |
| Presenter: | J. Kim, The University of Texas at Dallas |
| Correspondent: | Click to Email |
2-D nano-materials, like graphene and Van Der Waals layered materials, have attracted lots of attentions as new generation electronic materials for device applications because of their prominent properties such as high-mobility, flexibility and optical transparency compared to conventional semiconductor materials like silicon. Therefore, it is desperately required to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition, physical assembly among others have been employed in order to integrate dielectrics for graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of graphene, most of the atomic layer deposition methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A review regarding the various dielectric integration schemes will be provided. Effects of ALD process on transport characteristics of 2D channel layers including graphene and TMD (transition metal dichalcogenide) will be also discussed.
This work was financially supported by the SWAN program funded through NRI-SRC.