AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Friday Sessions
       Session EM+NS+TF-FrM

Invited Paper EM+NS+TF-FrM10
Monolithic Integration of Rare-Earth Oxides and Semiconductors for On-Silicon Technology

Friday, November 1, 2013, 11:20 am, Room 102 A

Session: Nanoelectronic Interfaces, Materials, and Devices/Crystalline Oxides on Semiconductors
Presenter: R. Dargis, Translucent Inc.
Authors: R. Dargis, Translucent Inc.
A. Clark, Translucent Inc.
F.E. Arkun, Translucent Inc.
D. Williams, Translucent Inc.
R. Smith, Translucent Inc.
A. Demkov, University of Texas at Austin
A. O'Hara, University of Texas at Austin
Correspondent: Click to Email
Increasingly there is a need to integrate functional semiconductors such as III-V’s or III-N with low cost manufacturing attainable through existing silicon based technology. Scalability is one of the main issues here, because the cost savings from the Si processing can be only realized if 150-200 mm diameter substrates are used. This could be achievable by formation of the semiconductor layers on the silicon substrates. However, direct growth of the device-grade layers on silicon in many cases is impossible due to difference in crystal structure, huge lattice and thermal expansion mismatch or even chemical reactivity of the compounds. The most of the problems can be solved by introduction of buffer layers that help for stress management. Among the materials of consideration, epitaxial rare – earth oxides have several benefits: beside their crystallographic properties that allow them to be used for stress managing layers, their electrical, optical and thermal properties (good balance between bandgap and electrical permittivity, moderate refraction index, reasonable thermal conductivity) make them useful for additional functions such as electric field suppression layers, high reflectivity heterostructures, optically active heterostructures. In this presentation, some approaches of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology will be demonstrated. Engineering of the interface between the oxides and the substrate from single crystal to amorphous by controlling the epitaxy process parameters opens way for formation of relaxed or pre-stressed structures that can be used as a template for the growth of III-N semiconductors on silicon. Polymorphism of some of the rare-earth oxides allows to manipulate their crystal structure from cubic to hexagonal and to grow buffer layers that can be used for germanium on insulator on silicon. Additionally, multilayer silicon-oxide distributed Bragg reflectors with high reflectivity at designed wavelength can be grown with only several pairs of the layers and can be used for light emitting devices.