AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM+AS+PS+TF-ThM

Invited Paper EM+AS+PS+TF-ThM10
Molecular Layer Deposition of Organic Films for Nanoelectronics Applications

Thursday, October 31, 2013, 11:00 am, Room 102 A

Session: Materials and Process for Advanced Interconnects I
Presenter: S.F. Bent, Stanford University
Correspondent: Click to Email

Many challenges exist in forming the nanostructured materials that will be needed for future electronics technologies. New approaches are required in both the materials and the processing methods to achieve the required atomic-scale level of control. This presentation will focus on the potential for molecular layer deposition (MLD) to solve some of the technological challenges in nanoelectronics applications. MLD, like the analogous process of atomic layer deposition, utilizes an alternating sequence of self-limiting reactions, and it can be used to deposit conformal, tunable organic films with controllable thicknesses down to the sub-nanometer scale. In our studies, a variety of nanoscale organic films have been deposited by MLD via urea coupling chemistry and other related coupling chemistries. Different backbones have been used to tune the properties of the organic films, which are attached covalently to the underlying substrate. Incorporation of blended and nanolaminate films, which can allow for the films properties to be optimized at a molecular level, has also been explored, and the films have been characterized by a variety of experimental techniques.

A potential application for MLD films is for advanced interconnects. To meet the aggressive demands of interconnect scaling, future devices will require ultrathin, smooth, conformal copper diffusion barriers and seed layers, motivating the development of new barrier layer materials. Organic films are one promising class of materials that have received interest as a possible solution. We have explored the use of MLD to form nanoscale organic thin films for barrier layer applications. The technique allows tailoring of the film properties to optimize desirable barrier properties, such as density, copper surface adhesion, thermal stability, and low copper diffusion. We will describe the copper diffusion barrier properties of the nanoscale organic films as tested by adhesion, annealing, and microscopy studies. Other applications of the MLD films for nanoelectronics, including use as resist materials for extreme ultraviolet (EUV) lithography and as surface modification layers for subsequent materials deposition, will also be presented.