AVS 60th International Symposium and Exhibition
    Spectroscopic Ellipsometry Focus Topic Thursday Sessions
       Session EL+AS+EN+PS+SS+TF-ThM

Invited Paper EL+AS+EN+PS+SS+TF-ThM9
Materials Characterization using THz Ellipsometry and THz Optical Hall Effect

Thursday, October 31, 2013, 10:40 am, Room 101 A

Session: Spectroscopic Ellipsometry for Photovoltaics and Instrument Development
Presenter: T. Hofmann, University of Nebraska-Lincoln
Correspondent: Click to Email

Ellipsometry in the THz spectral range has been demonstrated to be a very versatile tool for the investigation of semiconductor heterostructures, meta-materials, 2D electron gases (2DEG), and even graphene.

In this talk, instrument development with particular emphasis on frequency-domain, rotating optical element THz ellipsometry will be reviewed and recent progress on THz optical Hall-effect systems, which encompasses generalized ellipsometry in magnetic fields, will be discussed.

The application of THz ellipsometry for the accurate measurement of complex optical constants of isotropic and anisotropic bulk materials and thin films will be illustrated briefly. The progress on THz generalized ellipsometry investigations of 3D metal nanostructured thin films will be reported in detail. The investigated films exhibit a strong anisotropic optical response in the THz spectral range. It will be demonstrated that the anisotropic optical response of 3D nanostructures changes drastically as the function of the dielectric properties of the ambient. Applications for 3D metal nanostructured thin films as THz optical sensors will be discussed.

In addition, recent results on application of THz optical Hall-effect measurements will be reported. Exemplarily, temperature-dependent THz optical Hall-effect investigations of AlGaN/GaN high electron mobility transistors structures are shown. Our findings indicate that the 2DEG sheet density is independent of the sample temperature. The mobility and effective mass, however, strongly depend on the sample temperature. The mobility shows a strong increase with decreasing temperature largely due to the reduction of LO phonon scattering. The opposite behavior is observed for the effective mass and explained by the reduction of the 2DEG confinement, i.e., the wave function penetration of the AlGaN with increasing temperature.