AVS 60th International Symposium and Exhibition
    Applied Surface Science Tuesday Sessions
       Session AS-TuM

Paper AS-TuM10
Practical Auger Spectroscopy

Tuesday, October 29, 2013, 11:00 am, Room 204

Session: Developments in Electron Spectroscopies for Non-Ideal Samples
Presenter: W.F. Stickle, Hewlett Packard
Authors: M.D. Johnson, Hewlett Packard
D.F. Paul, Physical Electronics Inc.
W.F. Stickle, Hewlett Packard
J.F. Moulder, Physical Electronics Inc.
Correspondent: Click to Email
Auger spectroscopy is a mainstay in many analytical laboratories where high spatial resolution and compositional analysis are necessary for problem solving. Two related questions often come up during an analysis. The first question has to do with quantification and is there a way to sort out the different chemistries observed on a sample, either spatially in x or y or as a function of depth. The second analytical question has to do with detection of trace amounts of a material especially in the presence of peak overlap. Various approaches to these practical questions can be used such refining relative sensitivity factors and the application of numerical methods. Further, the use of high spectral resolution data may increase the ability to detect trace amounts of a material in a complex matrix as well as to increase the detection limits of the analysis. These questions are explored using practical systems of silicon, silicon dioxide, silicon nitride and silicon carbide where the Si KLL peaks shift and change lines shape. Practical aspects of detection limits are illustrated in the examination of trace amounts of silicon and/or hafnium in a tantalum oxide matrix where there is overlap between the Si KLL, Ta MNN series and the Hf MNN series Auger transitions.