Paper TF2-TuA1
Characteristics of Nanomaterials Embedded in Atomic Layer Deposition Thin Films

Tuesday, October 30, 2012, 2:00 pm, Room 11

Atomic layer deposition (ALD) is demonstrated as a method to fabricate NP embedded thin films, and provides new opportunities to alter the characteristic properties of nanomaterials. This work examines conducting and semiconducting ALD materials growth on nanoparticles and nanowires for opportunities to alter the optical behavior and conductive behaviors of nano-enabled materials. For example, gold nanoparticles (15 nm diameter) are embedded into dense inorganic zinc oxide nanofilms deposited by atomic layer deposition onto a fibrous textile template. By changing the dielectric field surrounding the nanoparticle with the ALD ZnO, the surface plasmon resonance is dampened, resulting in significant changes to the optical absorption behavior of the textile. The alteration of the surface plasmon resonance is examined with increasing nanoparticles concentration on the fiber surface and with increasing ALD coating thickness. For example, the absorption at 900 nm is enhanced by up to 4.8x for a 45 nm ZnO ALD coating. Minimal increase in absorption is observed with additional ZnO growth. Cathodoluminescence evaluation of ZnO ALD on Au nanoparticles -loaded nylon-6 produces a ~65% decrease in the defect luminescence and a corresponding ~80% increase in the band edge luminescence. In addition, an analysis of the electrical properties of nanoparticle and nanowire embedded ALD thin films are provided. Using externally fabricated nanomaterials and embedding them in ALD thin films offers the ability to study and understand near surface interactions that can alter the characteristics of the nanomaterials.