| AVS 59th Annual International Symposium and Exhibition | |
| Thin Film | Wednesday Sessions |
| Session TF+AS-WeA |
| Session: | Thin Films: Growth and Characterization-I |
| Presenter: | C. Boutwell, University of Central Florida |
| Authors: | C. Boutwell, University of Central Florida M. Wei, University of Central Florida W.V. Schoenfeld, University of Central Florida |
| Correspondent: | Click to Email |
ZnMgO films were grown on MgO substrates by Plasma-Enhanced Molecular Beam Epitaxy. Epilayer morphology, stoichiometry, and crystalline orientation were investigated. Films were produced by varying cation source temperature/flux, substrate temperature, and oxygen plasma power and flow rate. Crystalline immiscibility was determined in the phase mixed cubic/wurtzite range. Growth rate varied from 30nm/hr to 175nm/hr while roughness varied from 4nm to 110nm in cubic to mixed-phase samples. Wurtzite ZnO peaks at (002) and (101) were apparent from θ-2 θ X-Ray Diffraction on phase separated films, indicating multiplanar ZnO crystallite growth on the (001) MgO substrate. Growth condition information will be useful for optimization of optoelectronic devices functional in the deep ultraviolet/solar-blind range.