| AVS 59th Annual International Symposium and Exhibition | |
| Thin Film | Wednesday Sessions |
| Session TF+AS-WeA |
| Session: | Thin Films: Growth and Characterization-I |
| Presenter: | M. Wei, University of Central Florida |
| Authors: | M. Wei, University of Central Florida R.C. Boutwell, University of Central Florida W.V. Schoenfeld, University of Central Florida |
| Correspondent: | Click to Email |
Zinc oxide (ZnO) based material is attractive for high efficiency ultraviolet (UV) optoelectronics devices. We will report growth of high quality ZnMgO on both sapphire and ZnO substrate by plasma-assisted molecular beam epitaxy (MBE). With relatively low growth rate and optimized growth condition, we were able to achieve step flow growth of ZnO thin films. ZnO thin films grown on sapphire showed high crystalline quality, low carrier concentration, high mobility and sub-nanometer surface roughness with terrace steps, indicating suitability for UV application. Homoepitaxial ZnO films were grown on both c-plane and miscut ZnO substrates with atomically flat surface, no threading dislocation and same crystallinity as the substrate. Ga doping was demonstrated for ZnMgO films on sapphire and ZnO substrates. This work may lead to the realization of high efficient UV emitters such as Laser diodes.