| AVS 59th Annual International Symposium and Exhibition | |
| Thin Film | Tuesday Sessions |
| Session TF+AS-TuA |
| Session: | Modeling and Analysis of Thin Films |
| Presenter: | S. Macke, Max Planck - UBC Centre for Quantum Materials, Canada |
| Authors: | S. Macke, Max Planck - UBC Centre for Quantum Materials, Canada A. Radi, University of British Columbia, Canada R. Sutarto, Canadian Light Source, Canada G. Christiani, Max-Planck-Institute for Solid State Research, Germany G. Logvenov, Max-Planck-Institute for Solid State Research, Germany G. Sawatzky, University of British Columbia, Canada B. Keimer, Max-Planck-Institute for Solid State Research, Germany V. Hinkov, Max Planck - UBC Centre for Quantum Materials, Canada |
| Correspondent: | Click to Email |
X-ray resonant reflectometry (XRR) is the ideal tool to study the depth resolved and element-specific electronic structure of multilayer films. Besides the structural parameters of thin films like thicknesses and roughnesses one is sensitive to the dielectric tensor of the film which allows to retrieve depth profiles of the magnetic, orbital[1] and valence configuration.
Due to the complex physics of reflectometry this measurement method needs sophisticated tools to analyze the results quantitatively [2]. The issues arising with this method are addressed and discussed.
By changing angle, energy and polarization of the incoming beam complete reflectivity maps can be measured leading in principle to an accurate picture of the depth resolved electronic states of thin films. The standard model used in reflectometry is based on compound layers with a defined thickness, roughness and dielectric tensor. But such a simple model is usually not capable to reproduce a full measured reflectivity map. The main reasons are especially contaminations, additional oxide layers and interdiffusion between layers.However, introducing a layer system based on the element specific atomic density and scattering factors instead of dielectrics tensors allows more degrees of freedom for the system and allows to reproduce the reflectivity maps. Thereby the advanced model is capable to retrieve the element specific density profiles of thin films.
The method is introduced by analyzing a simple film of PrNiO3 grown on an LSAT substrate. The reflectivity map is measured from 500eV to 1100eV.
[1] E. Benckiser et. al., Nature Materials 10, 189 (2011)[2] ReMagX, www.simulationcorner.net/ReMagX/