AVS 59th Annual International Symposium and Exhibition
    Thin Film Thursday Sessions
       Session TF+AS+SS-ThA

Paper TF+AS+SS-ThA8
Time-resolved and Surface Plasmon Resonance Studies in Metal-Insulator Phase Transition in VO2 Thin Films

Thursday, November 1, 2012, 4:20 pm, Room 11

Session: Thin Films: Growth and Characterization-III
Presenter: L. Wang, College of William and Mary
Authors: L. Wang, College of William and Mary
C. Clavero, College of William and Mary
K. Yang, College of William and Mary
E. Radue, College of William and Mary
M.T. Simons, College of William and Mary
I. Novikova, College of William and Mary
R.A. Lukaszew, College of William and Mary
Correspondent: Click to Email

Vanadium dioxide (VO2) is a prominent example for a material exhibiting a metal-insulator transition (MIT) as a function of temperature with a phase transformation around 340 K from a low-temperature insulator state to a high-temperature conducting state. During the MIT the lattice structure of VO2 transforms from a monoclinic (insulator) to a tetragonal structure (conductor). Whether these structural changes are solely responsible for the nature of the transition or whether correlation effects also play a role, has been a subject of much debate. Two mechanisms have been generally considered to explain the origin of the MIT in VO2. The Mott-Hubbard mechanism suggests that electron-electron correlation drives the first-order MIT whereas the Peierls mechanism proposes that a strong electron-lattice interaction leads to the MIT. In order to have a better understanding of the phase transition mechanism and the optical properties of this material across the MIT, we present our research studies on epitaxial VO2 thin films. We have investigated the optical transmission of a VO2 thin film during the thermally induced MIT in two different optical spectral regions, with cw THz light and low power (1 mW) IR light (1520 nm HeNe), to identify different mechanisms at play. We have found that the transmission of the THz light starts to decrease at higher temperature than that of the IR light thus probing different stages during the thermally induced MIT. We also investigated surface plasmon polariton excitation in VO2 thin films in the IR region, and observed a clear trend from non-absorption in the insulator phase to a high absorption in the metallic phase while changing the VO2 temperature . Our studies are aimed at helping to understand the evolution of the metallic phase in VO2 thin films after the MIT and relaxation back to the insulator phase upon the MIT which is of paramount importance for ultra-fast switch applications. Finally, we note that Cavalleri et al. [i] reported that the light-induced phase transition happens in less than half a pico-second thus hinting at electronic processes, although they also found that it strongly depended on pump-laser power which is suggestive of lattice interactions. We will compare out time-resolved measurements also using pump-probe techniques but with the sample held at low-temperature vs. room-temperature to illustrate the role of the pump-power on the photo-induced MIT.
 
[i] A. Cavalleri, Cs. Tóth, C.W. Siders, J. A. Squier, F. Ráksi, P. Forget and J. C. Kieffer, Phys. Rev. Lett. 87 (23), 237401 (2001).