AVS 59th Annual International Symposium and Exhibition
    Thin Film Thursday Sessions
       Session TF+AS+SS-ThA

Paper TF+AS+SS-ThA2
SIMS as a Method for Probing Stability of the Molecule-Substrate Interface in SAMs

Thursday, November 1, 2012, 2:20 pm, Room 11

Session: Thin Films: Growth and Characterization-III
Presenter: J. Ossowski, Jagiellonian University, Poland
Authors: J. Ossowski, Jagiellonian University, Poland
J. Rysz, Jagiellonian University, Poland
A. Terfort, Goethe University, Germany
P. Cyganik, Jagiellonian University, Poland
Correspondent: Click to Email

Despite the numerous structural studies of Self-Assembled Monolayers (SAMs) available nowadays, the structure and stability of the SAM-substrate interface is still poorly understood and controversial even for the most simple SAM system. As a consequence, the experimental and theoretical analysis of the bonding geometry and the stability of the molecule-substrate interface for technologically relevant, and therefore more complicated SAMs, is extremely difficult.

In this presentation we report extensive static secondary ion mass spectrometry (SIMS) studies1 on homologic series of thiols (BPnS, CH3‑C6H4‑C6H4-(CH2)n-S-Au(111), n = 2-6) and selenols (BPnSe, CH3‑C6H4‑C6H4-(CH2)n-Se-Au(111), n = 2-6) where structure and stability of molecule-substrate interface was systematically modified as verified by our previous experiments2-5. Correlating SIMS data with previous microscopic2, spectroscopic3 and very recent neutral mass spectrometry studies4,5 we show that SIMS can be successfully applied to monitor fine changes in the molecule-substrate interface stability of these model SAMs. Further, to demonstrate general applicability of SIMS for such analysis, we report use of this method for monitoring influence of S versus Se substitution in purely aliphatic (heksadecanethiol/selenol) and aromatic (anthracenethiol/selenol) SAMs on Au(111). In summary our experiments show that a new approach for probing the stability of molecule-substrate interface in SAMs can be proposed by using SIMS. Importantly, this technique is relatively fast and can be applied for virtually all complicated and technologically relevant SAMs.

References

(1) J. Ossowski, P. J. Rysz, A. Terfort and P. Cyganik in preparation.

(2) P. Cyganik, K. Szelagowska-Kunstman, et al. J. Phys. Chem. C 2008, 112, 15466.

(3) K. Szelagowska-Kunstman, P. Cyganik, et al. Phys. Chem. Chem. Phys. 2010, 12, 4400.

(4) S. Wyczawska, P. Cyganik, A. Terfort, P. Lievens, ChemPhysChem (communication) 2011, 12, 2554.

(5) F. Vervaecke, S. Wyczawska, P. Cyganik, et al. ChemPhysChem (communication) 2011, 12, 140.