AVS 59th Annual International Symposium and Exhibition
    Transparent Conductors and Printable Electronics Focus Topic Wednesday Sessions
       Session TC+EM+AS-WeA

Invited Paper TC+EM+AS-WeA1
Metal Oxides and Organic Materials for Printed Electronics

Wednesday, October 31, 2012, 2:00 pm, Room 007

Session: Printable and Flexible Electronics
Presenter: A. Facchetti, Polyera Corp. and Northwestern U.
Correspondent: Click to Email
Printed electronics is a new technology envisioning the fabrication of electronic devices using printing methodologies instead of conventional photolitography employed in the silicon industry. Metal oxide- and organic-based materials will be key players for this technology. In this presentation I will discuss our latest results in developing new printable organic semiconductors Furthermore, I will describe amorphous and polycrystalline metal oxide formulations in which the corresponding films can be annealed at temperatures < 250 ºC. For instance, solution-processed amorphous tin-doped indium oxide (ITO) films for TFT fabrication at temperatures <250 °C can be achieved by controlling film precursor solution In+3 vs. Sn+4 molar ratio resulting in electron mobilities > 2 cm2 V−1s−1 and ~ 20 cm2 V−1s−1 for TFTs using SiO2 and a self-assembled nanodielectric (SAND) as the gate dielectrics, respectively. Finally, a new general strategy for fabricating solution-processed metal oxide TFTs at dramatically lower temperatures (as low as 200 ° C for all TFT electrical components) using self-energy generating combustion chemistry will be presented. Our results show that by tuning the gate dielectric-semiconductor interface dramatically enhances performance, yielding In2O3, IZO, IZTO, and IGZO /amorphous alumina gate dielectric TFTs having electron mobilities of 40 cm2/Vs and 13 cm2/Vs at Tanneal = 250 ° C and 200 ° C, respectively.