AVS 59th Annual International Symposium and Exhibition
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP6
Passivation Effects on Electrical Properties of SnO2 Nanowires FET Treated by Nitrogen Plasma

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Nanometer-scale Science and Technology Poster Session
Presenter: Y.H. Choi, Korea University, Republic of Korea
Authors: Y.H. Choi, Korea University, Republic of Korea
P.S. Kang, Korea University, Republic of Korea
J.H. Na, Korea University, Republic of Korea
J.S. Kim, Korea University, Republic of Korea
S.-H. Choi, Korea Institute of Science and Technology, Republic of Korea
M.Y. You, Korea University, Republic of Korea
G.T. Kim, Korea University, Republic of Korea
Correspondent: Click to Email
SnO2 (tin oxide) are used in various research fields such as thin film transistors (TFTs), flexible and transparent nanowire transistors, and gas sensors, because of large band gap of 3.6 eV, high electron mobility and a high surface-to-volume ratio. However, the electrical characteristics of SnO2 nanowires FETs are not so stable in ambient conditions due to the chemical reactions between oxygen molecules in air and oxygen vacancies in SnO2 nanowires. To improve the device reliabilities of SnO2 nanowires FETs, the N2 plasma were treated. The N2 plasma treatments on SnO2 nanowires FETs led to the reduction of the hysteresis width in the transfer characteristics. Also the threshold voltage shifted to the positive direction. Even though the reliability of SnO2 nanowires FETs is improved after the N2 plasma treatment, unnecessary degradations can be induced with time in an ambient environment, requiring the passivation process. The PMMA and the carbon polymers deposited by CF4 plasma treatments were used for the passivation of the SnO2 nanowire FET devices. To investigate the effect of the passivation, the unpassivated and the passivated devices have been compared. The changes of the mobility and the carrier concentration were separately analyzed, indicating the different behaviors with or without the passivation.