AVS 59th Annual International Symposium and Exhibition
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP12
The Electrical Property of the Interface Between Dielectrophoresis (DEP)-Aligned Single-Walled Carbon Nanotubes and Semiconductors

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Nanometer-scale Science and Technology Poster Session
Presenter: M. Hines, Alabama A&M University
Authors: M. Hines, Alabama A&M University
Z. Xiao, Alabama A&M University
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The dielectrophoresis (DEP) method was used to align and deposit single-walled carbon nanotubes for the fabrication of high-performance single-walled carbon nanotube field-effect transistors (CNTFETs). Semiconducting materials such as silicon and germanium were used as the source/drain contact material in the fabrication of CNTFETs for improving the device electrical performance. The DEP-aligned carbon nanotubes were mesh networks interconnecting with metallic nanotubes and semiconducting nanotubes. The vacuum-based deposition such as e-beam evaporation and sputtering deposition was used to grow the silicon and germanium thin films, and clean room-based microfabrication techniques such as UV lithography was used to fabricate the CNTFETS. The electrical property of fabricated CNTFETs were measured and characterized. The semiconductors can significantly increase the ratio of the switch-on/off electrical currents in the fabricated CNTFETS. The electrical property of the interface between the single-walled carbon nanotubes and the semiconductors and the fabricated CNTFETs will be reported in the conference.