Paper NS+EN-TuM6
Selective Deposition of Germanium Nanowire Segments via a Hybrid Oxide-Stabilized/Vapor-Liquid-Solid Growth Method
Tuesday, October 30, 2012, 9:40 am, Room 12
The introduction low levels of oxygen during the vapor-liquid-solid growth (VLS) of germanium nanowires causes an oxide sheath to form at the catalyst/nanowire/vapor interface for the extent that the growth persists. This results in extremely high aspect ratio nanowires due to the removal of homoepitaxial deposition and the finite energy required for heterogeneous nucleation of germanium on its oxide. Furthermore, with the removal of oxygen, the catalyzed oxide sheath terminates and conventional growth with finite sidewall deposition dominates subsequent growth. The successful transition between the aforementioned oxide-stabilized and conventional VLS regimes can be deliberately manipulated to grow finite conical nanowires segments with discontinuous changes in diameter.
Work was supported by the U.S. Army Research Office (W911NF-08-1-0067).