AVS 59th Annual International Symposium and Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS+EN-TuM

Paper NS+EN-TuM5
Ultrafast Carrier Dynamics of Si Nanowires Grown by LPCVD

Tuesday, October 30, 2012, 9:20 am, Room 12

Session: One-Dimensional Nanowires and Nanotubes
Presenter: A. Seyhan, Tokyo Institute of Technology and Nigde University, Turkey Japan
Authors: A. Seyhan, Tokyo Institute of Technology and Nigde University, Turkey Japan
T. Ishikawa, Tokyo Institute of Technology, Japan
S. Koshihara, Tokyo Institute of Technology, Japan
M. Simanullang, Tokyo Institute of Technology, Japan
K. Usami, Tokyo Institute of Technology, Japan
S. Oda, Tokyo Institute of Technology, Japan
Correspondent: Click to Email
This paper report the ultrafast carrier dynamics in silicon nanowires (NWs) grown by vapour-liquid-solid (VLS) mechanism in the low pressure chemical vapour deposition (CVD) reactor at 425°C. The femtosecond transient absorption measurements were studied by tuning probe wavelength in visible range to investigate the effect of pump and probe beam polarization, NW diameter, and pump fluence on the carrier dynamics. The fast carrier relaxation with lifetime of several picosecond in Si NWs can be attributed to surface trap states. This study has important implications in the understanding of ultrafast carrier dynamics of Si NWs.