AVS 59th Annual International Symposium and Exhibition
    Nanomanufacturing Science and Technology Focus Topic Tuesday Sessions
       Session NM-TuP

Paper NM-TuP2
Topographical and Raman Studies of Nano-graphite Patterns on Nanostructured Al and Si Surfaces by Carbon Drawing

Tuesday, October 30, 2012, 6:00 pm, Room Central Hall

Session: Topics in Nanomanufacturing Poster Session
Presenter: Y. Takarai, Kanto Gakuin University, Japan
Authors: Y. Takarai, Kanto Gakuin University, Japan
T. Hirakawa, Kanto Gakuin University, Japan
K. Doi, Kanto Gakuin University, Japan
H. Kato, Kanto Gakuin University, Japan
A. Ishii, Kanto Gakuin University, Japan
Y. Watanabe, Kanto Gakuin University, Japan
S. Takemura, Kanto Gakuin University, Japan
T. Hiramatsu, Kanto Gakuin University, Japan
Correspondent: Click to Email
The authors performed carbon drawing and embossing methods in order to fabricate nanoscale structures on nanostructured Al surface and Si wafer. Carbon drawing is a nanofabrication method by gently pushing bulk graphite on the surface and drawing it. In the present study, the authors used HOPG and black carbon flakes for carbon drawing which performed on a nanostructured Al substrate. The surfaces were investigated by scanning probe microscopy (SPM) and Raman spectroscopy. The authors performed carbon drawing on the aluminum linked-crater structure. The AFM image demonstrated that each nanoscale crater was filled with carbon by the drawing and a unique carbon dots structure was created on the surface. A unique nanostructure was also fabricated by carbon drawing on the aluminum linked-crater structure. In the case of Si wafer, drawing with carbon flakes made stripe structure. The stripe separation was approximately 1 micrometer. Raman spectroscopy was used to characterize pre-drawing Si wafer and post-drawing Si wafer. Raman peaks due to Si were observed at around 500cm-1 and 1000cm-1in the pre-drawing sample. Some characteristic peaks of carbon were observed in the post-drawing sample. A peak at 1360cm-1 can be assigned to D band. A peak at 1600cm-1 can be assigned to G band (Graphite band). Raman peaks due to glassy carbon appeared after carbon drawing on Si wafer. Furthermore, the authors performed embossing method with inserting carbon flakes between Si wafer and nanostructured Al. It was found that 　 unique nanostructures were created on the Si surface by embossing method. In the case of aluminum highly-oriented line structure, the embossing made the nanoscale line pattern transfer to the Si wafer. The transferred line separation was estimated as several tens of nanometers.In the case of aluminum line structure, drawing a line perpendicular to the HOPG made arch-like structure. It was confirmed that the carbon was along the line in this structure. Raman spectroscopy was used to characterize pre-drawing and post-drawing nanostructured Al surfaces. A peak due to Al2O3 was observed at around 2900cm-1 in the Pre-drawing. Some characteristic peaks were observed in the post-drawing sample. A peak at 1360cm-1 can be assigned to D band due to defects in the crystal which is supposed to appear when crystallinity of thin graphene is distorted. A peak at 1600cm-1 can be assigned to G band, which appears when the measured object is allotrope of carbon. This peak intensity depends on wavelength of incident light. This work was aided by MEXT-supported Program for the Strategic Research Foundation at Private Universities.