The aim of the present work is to develop the nanofabrication methods of highly-oriented patterns of carbon nanotubes on the various substrates and is to characterize the electronic and optical properties of the patterns. The authors proposed a nanoscale arrangement method using a nanostructured surfaces as a nanofabrication template. Single-walled carbon nanotubes (SWCNTs) were arranged in highly-oriented line pattern with nanoscale trenches fabricated on an aluminum surfaces by combined process of chemical treatments and anodization. SWCNTs dissolved in catechin containing solution. Then this solution were dropped on the nanostructures as a droplet utilizing micropipette and extended on the surface. SWCNTs were locally aligned along the line patterns. Dynamic force microscopy (DFM) observations and the cross section analysis were conducted on pre-aligned and aligned surfaces on the highly-oriented structures. Atomic force microscopy-current imaging tunneling spectroscopy (AFM-CITS) measurements were also conducted in order to investigate local conductive properties of CNTs. In the measurement of I-V characteristics by point contact, quantum conductivity of carbon nanotubes were observed. The proposed method can be applied for the CNT arrangement on different surfaces such as Si and glass substrates by nanoscale imprint which enables the prefabricated nanoscale pattern transcription. Nano-contact transcription was performed according to the following steps: CNTs dissolved in catechin containing solution were dropped with a micropipette on an aluminum line structure. The Al sample was placed on a silicon substrate and was pressed for 30 sec in order to transfer the CNTs pattern to the Si substrate. Then the Al template was removed and the Si substrate was dried naturally. In the case of the line pattern template, it was found that SWCNTs line pattern could be transferred to a Si wafer. Transcription of double wall carbon nanotubes (DWCNTs) was also the same result. Arrangement of multi-walled carbon nanotube (MWCNT) and cup-stacking CNT was also performed. Raman characterization of the fabricated patterns of SWCNT, DWCNT, MWCNT and cup-stacking CNT was conducted in order to investigate the detailed structures on the surface. Two types of Raman peaks which were characteristic of CNT were observed by Raman measurements. Several RBM peaks appeared in the low frequency region (80-400 cm-1). Asymmetric shaped G-band was confirmed (1500-1700 cm-1). A shoulder peak was observed in the low wavenumber side of the G-band.

This work was aided by MEXT-supported Program for the Strategic Research Foundation at Private Universities.