| AVS 59th Annual International Symposium and Exhibition | |
| Magnetic Interfaces and Nanostructures | Wednesday Sessions |
| Session MI-WeM |
| Session: | Topological Insulators and Rashba |
| Presenter: | M. Donath, Muenster University, Germany |
| Authors: | M. Donath, Muenster University, Germany S.D. Stolwijk, Muenster University, Germany A. Zumbülte, Muenster University, Germany S.N.P. Wissing, Muenster University, Germany Ch. Langenkämper, Muenster University, Germany A.B. Schmidt, Muenster University, Germany P. Krüger, Muenster University, Germany K. Miyamoto, Hiroshima University, Japan K. Shimada, Hiroshima University, Japan A. Kimura, Hiroshima University, Japan K. Sakamoto, Chiba University, Japan R.C. Hatch, Aarhus University, Denmark P. Hofmann, Aarhus University, Denmark |
| Correspondent: | Click to Email |
Rashba-type spin splittings in the surface electronic structure of heavy elements and topological insulators are a hot topic of today’s research in condensed matter physics. The interest is guided by possible applications of these materials in spintronic devices, in which the electron spin is used as an information carrier.
In this talk, I will present several experimental studies of surface states of different origin and with distinct spin configurations. At W(110), a spin-polarized Dirac-cone-like surface state with d character was identified, which appears below the Fermi level in a spin-orbit-induced symmetry gap of the projected bulk-band structure [1]. At Tl/Si(111), an unoccupied surface state with a spin-dependent energy splitting of more the 0.5 eV exhibits a distinct spin structure around the K point, leading to almost complete spin polarization at the Fermi level. Furthermore, the spin-dependent unoccupied electron states of the topological insulator Bi2Se3(111) were studied as a function of different preparation conditions. Making combined use of direct and inverse photoemission, we were able to characterize the electronic states below and beyond the Fermi level.
[1] K. Miyamoto et al., Phys. Rev. Lett. 108, 066808 (2012).