Paper MI-ThP5
Nanomechanical Manipulation of the Anomalous Hall Effect in GaMnAs

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

We show an explicit dependence of the anomalous Hall effect (AHE) as well as magnetic anisotropy (MA) on locally induced mechanical strains in low-temperature molecular beam epitaxy (LT-MBE) prepared GaMnAs. LT-MBE GaMnAs (001) epilayers were prepared on AlGaAs layer, which serves (1) to enhance compressive strain in GaMnAs during growth as well as (2) to act as a sacrificial layer. By selective nanopatterning and removal of the AlGaAs layer, we realise free-standing GaMnAs microbeams (along (110),(110), and (100) directions) with multiple lateral probes along the length of the microbeam. Due to the relaxation of the the compressive strain when released, GaMnAs microbeam mechanically buckles. By simultaneous measurements of ρ_xx and ρ_xy along the length of the buckled GaMnAs microbeam (1.4 K < T < 300 K), we probe both AHE and MA as functions of local strain. We find relatively small changes in MA while large suppression of AHE for regions along the microbeam experience the highest mechanical strain. We demonstrate the novelty of such interplay between mechanical strain and AHE by realising simple Hall crosses which mechanical state can be robustly read by the AHE signal - which correspondence between mechanical state and transport properties are well suited for a low-power, non-volatile memory elements. Furthermore, we demonstrate the applicability of above methods beyond GaMnAs to other material systems which are sensitive to small mechanical strains via strong spin-orbit interactions, namely topological insulator Bi₂Se₃.