AVS 59th Annual International Symposium and Exhibition
    Helium Ion Microscopy Focus Topic Thursday Sessions
       Session HI-ThP

Paper HI-ThP3
Helium and Neon Ion Beams Induced Platinum Deposition

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Aspects of Helium Ion Microscopy Poster Session
Presenter: H. Wu, Carl Zeiss
Authors: H. Wu, Carl Zeiss
D. Ferranti, Carl Zeiss
D. Xia, Carl Zeiss
W. THompson, Carl Zeiss
L.A. Stern, Carl Zeiss
P.D. Rack, The University of Tennessee
C.M. Gonzalez, The University of Tennessee
M.W. Phaneuf, Fibics Incorporated
Correspondent: Click to Email
Gallium focused ion beams (Ga-FIB) have been used by the semiconductor industry to provide nanoscale deposition or milling. However, Ga ion implantation and limited spatial resolution capability encourage people to explore other ion sources for nanofabrication. Helium and Neon ion beams have been studied for many years as good alternative ion sources to replace Ga ion beams. The GFIS (gas field ion source) microscope is able to provide both He and Ne ion beams. Because of the mass difference of He and Ne ions, the interactions of ions with precursor molecules result in different sputtering rates, implantation and deposition yields. In this study, we use methylcyclopentadienyl trimethyl platinum (PtC9H16) as the precursor, and the metal deposition is induced by He and Ne ion beams respectively. To optimize the deposition process, beam current and dwell time have been studied. Compared with Ga ions, both He and Ne ion beams have smaller probe sizes, cause less surface damage and results in deposited material with superior properties without gallium contamination. The Pt nanowires using Ne ion beam exhibit lower resistivities, as low as 600 μΩ-cm, than those nanowires using He ion beam. Composition analysis by EDX shows the higher Pt: C ratio of Pt deposition by Ne ion beam than that by He ion beam, which is consistent with the resistivity results.