| AVS 59th Annual International Symposium and Exhibition | |
| Helium Ion Microscopy Focus Topic | Thursday Sessions |
| Session HI-ThP |
| Session: | Aspects of Helium Ion Microscopy Poster Session |
| Presenter: | A. Gölzhäuser, University of Bielefeld, Germany |
| Authors: | X. Zhang, University of Bielefeld, Germany H. Vieker, University of Bielefeld, Germany A. Beyer, University of Bielefeld, Germany A. Gölzhäuser, University of Bielefeld, Germany |
| Correspondent: | Click to Email |
A helium-ion microscope (HIM) is capable of creating nanoscale patterns and its beam can perform ion milling as commonly done in focused ion beam (FIB) systems. Here we use a helium ion beam as direct writing tool to cross-link 4’-nitro-1,1’-biphenyl-4-thiol (NBPT) SAMs with arbitrary patterns. The cross-linked SAMs were transferred to either silicon substrates with an oxide layer for optical characterization or transmission electron microscopy (TEM) grids for preparing free-standing carbon nanomembranes (CNMs). The required dose for the complete cross-linking with helium ions is quite similar to the dose earlier established with electrons. To determine the feature resolution limit, we prepared dot arrays of CNMs at various doses and 5 nm feature sizes have been achieved. Proximity effect and sample damage on the nanoscale patterns were also investigated. Furthermore, we use the ion beam to form nanopores in the CNM with an attainable feature size of 5 nm.