AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Thursday Sessions
       Session GR-ThP

Paper GR-ThP13
Raman Spectroscopy of Double Layer Graphene FETs: Mapping the Misorientation Angle

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Graphene and Related Materials Poster Session
Presenter: Z. Razavi Hesabi, Georgia Institute of Technology
Authors: Z. Razavi Hesabi, Georgia Institute of Technology
C. Joiner, Georgia Institute of Technology
T. Roy, Georgia Institute of Technology
E.M. Vogel, Georgia Institute of Technology
Correspondent: Click to Email
Double layer graphene, a stacked two dimensional honeycomb lattice of carbon atoms, is a very promising candidate for nanoelectronic applications. The electrical properties, such as high carrier mobility and tunable band gap, have been theoretically predicted to be highly dependent on the misorientation angle between the two layers. For industrial applications, the ability to map and control the misorientation angle between layers will be necessary to achieve the desirable electrical properties of the graphene devices. This work presents a method for systematically determining the misorientation between two layers on a wafer scale through the use of Raman spectroscopy.