| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Thursday Sessions |
| Session GR+EM+NS+SS+TF-ThA |
| Session: | Beyond Graphene: BN and Other 2D Electronic Materials; 2D Heterostructures |
| Presenter: | R. Addou, University of South Florida |
| Authors: | R. Addou, University of South Florida A. Dahal, University of South Florida M. Batzill, University of South Florida |
| Correspondent: | Click to Email |
Yttrium oxide (Y2O3) is a high-k dielectric material, with promising wetting behavior of graphene [1]. In our study we grew yttria by reactive MBE on Pt(111) supported graphene to investigate the structural and electronic properties of the graphene/yttria interface. Photoemission measurements indicate that the graphene layer is covered by yttria. Scanning tunneling microscopy (STM) and low energy electron diffraction reveal that at annealing temperatures higher than 600 °C yttria forms an ordered monolayer on top of graphene. In STM, a moiré pattern is observed that is a consequence of super-positioning of a hexagonal yttria monolayer lattice with that of graphene. X-ray photoemission indicates a shift of the C1s peak by 1 eV to higher binding energy upon depositing of the yttria film. This peak shift is explained by charge doping of graphene by the underlying Pt substrate due to the change in the work function of the yttria coated graphene.
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[1] Z. Wang et al. Nano Lett. 2010, 10, 2024–2030; L. Ding et al. Nano Lett. 2009, 9, 4209–4214.