AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Thursday Sessions
       Session GR+EM+NS+SS+TF-ThA

Invited Paper GR+EM+NS+SS+TF-ThA3
Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers

Thursday, November 1, 2012, 2:40 pm, Room 13

Session: Beyond Graphene: BN and Other 2D Electronic Materials; 2D Heterostructures
Presenter: J. Lou, Rice University
Authors: J. Lou, Rice University
S. Najmaei, Rice University
Z. Liu, Rice University
Y. Zhan, Rice University
P. Ajayan, Rice University
Correspondent: Click to Email
Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. Unlike conductive graphene and insulating h-BN, atomic layered MoS2 is a semiconductor material with a direct bandgap, offering possibilities of fabricating high performance devices with low power consumption in a more straight-forward manner.

In this talk, we will discuss our recent efforts on the large area growth of MoS2 atomic layers by a scalable chemical vapor deposition (CVD) method. The as-prepared samples can either be readily utilized for further device fabrication or be easily released from the growth substrate and transferred to arbitrary substrates. High resolution transmission electron microscopy and Raman spectroscopy on the as grown films of MoS2 indicate that the number of layers range from single layer to a few layers. Our results on the direct growth of MoS2 layers on dielectric leading to facile device fabrication possibilities show the expanding set of useful 2D atomic layers, on the heels of graphene, which can be controllably synthesized and manipulated for many applications.