| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Thursday Sessions |
| Session GR+EM+NS+SS+TF-ThA |
| Session: | Beyond Graphene: BN and Other 2D Electronic Materials; 2D Heterostructures |
| Presenter: | A. Kis, EPFL, Switzerland |
| Correspondent: | Click to Email |
Single layer MoS2 is a recent addition to the family of 2D materials and is reminiscent of graphene except that it is an intrinsic direct band gap semiconductor with a 1.8 eV gap. We have exfoliated single layers 6.5 Angstrom thick from bulk crystals of semiconducting MoS2, using the micromechanical cleavage technique commonly used for the production of graphene. Our nanolayers are mechanically and chemically stable under ambient conditions. We have fabricated transistors based on single-layer MoS2 which demonstrate that this material has several advantages over silicon for potential applications in electronics. Our transistors have room-temperature current on/off ratios higher than 108, mobility higher than 780 cm2/Vs and leakage currents in the fA range. Integrated circuits based on MoS2 have the capability to amplify signals and perform logic operations. Finally, I will show our work on suspended MoS2 membranes that show ripples similar to those observed in graphene. MoS2 also has superior mechanical properties: higher stiffness than steel and 30 times its breaking strength which makes it suitable for integration in flexible electronics.
References
1. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis. Single-layer MoS2 transistors. Nature Nanotechnology 6, 147, 2011. doi: 10.1038/nnano.2010.279
2. M.M. Benameur, B. Radisavljevic, J.S. Heron, S. Sahoo, H. Berger, and A. Kis. Visibility of dichalcogenide nanolayers. Nanotechnology 22, 125706, 2011. doi: 10.1088/0957-4484/22/12/125706
3. B. Radisavljevic, M.B. Whitwick, and A. Kis. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934, 2011. doi: 10.1021/nn203715c
4. J. Brivio, D.T.L. Alexander, and A. Kis. Ripples and Layers in Ultrathin MoS2 Membranes. Nano Letters 11, 5148, 2011. doi: 10.1021/nl2022288
5. S. Bertolazzi, J. Brivio, and A. Kis. Stretching and Breaking of Ultrathin MoS2. ACS Nano 5, 9703, 2011. doi: 10.1021/nn203879f