AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Thursday Sessions
       Session GR+EM+NS+SS+TF-ThA

Paper GR+EM+NS+SS+TF-ThA1
X-ray Photoelectron Spectroscopy Investigation of the Valence and Conduction Band Offset at Hexagonal a-BN:H/Si Interfaces

Thursday, November 1, 2012, 2:00 pm, Room 13

Session: Beyond Graphene: BN and Other 2D Electronic Materials; 2D Heterostructures
Presenter: S. King, Intel Corporation
Authors: S. King, Intel Corporation
M. French, Intel Corporation
J. Bielefeld, Intel Corporation
M. Jaehnig, Intel Coroporation
M. Kuhn, Intel Corporation
B. French, Intel Corporation
Correspondent: Click to Email
Due to a wide band gap (~ 6 eV) and close lattice matching, hexagonal boron nitride (h-BN) is of interest as a potential gate dielectric in graphene channel transistor devices. A key property for the success of h-BN as a gate dielectric in such devices is the valence and conduction band offsets at the h-BN/graphene and h-BN/gate electrode interfaces. In many graphene channel devices, amorphous or poly-Si is a desirable gate electrode material for compatibility in standard CMOS processing. In this regard, we have utilized x-ray photoelectron spectroscopy (XPS) to determine the valence band offset present at the interface between plasma enhanced chemically vapor deposited hexagonal a-BN:H and a (100) Si substrate. Combined with Reflection Electron Energy Loss Spectroscopy measurements of the a-BN:H band gap, we have also been able to determine the conduction band offset at this interface. The combined measurements indicate a type I alignment with valence and conduction band offsets of 1.95±0.1 and 2.15±0.17 eV respectively.