AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Monday Sessions
       Session GR+EM+ET+NS+TF-MoA

Invited Paper GR+EM+ET+NS+TF-MoA8
Growth of and Interactions in Epitaxial Graphene Layers

Monday, October 29, 2012, 4:20 pm, Room 13

Session: Electronic Properties and Charge Transport
Presenter: E. Rotenberg, Lawrence Berkeley National Laboratory
Authors: A. Bostwick, Lawrence Berkeley National Laboratory
A. Walter, Lawrence Livermore National Laboratory
Th. Seyller, Lawrence Livermore National Laboratory
K. Horn, Lawrence Berkeley National Laboratory
E. Rotenberg, Lawrence Berkeley National Laboratory
Correspondent: Click to Email
The electronic properties of graphene has been investigated using angle-resolved photoemission spectroscopy at the MAESTRO* facility of the ALS** synchrotron in Berkeley, California. This laboratory is unique in its ability to grow sophisticated samples for in situ study using angle-resolved photoemission spectroscopy, and to subtly alter their properties by engineering their surfaces by chemical doping or thickness control. In this talk I will discuss the electronic properties of graphene, focusing on the role of dopants to control the charge density and as defects to disrupt the metallic conduction. By measuring the spectrum of “plasmaronic” quasiparticle excitations, we can demonstrate the scale-free nature of the Coulomb interaction in Dirac systems. Such effects are readily observed on quasi-free standing graphene samples doped with long-range scatterers. Doping with short-range scatterers, on the other hand, results in a loss of conduction which we interpret as a manifestation of strong (Anderson) localization.

*Microscopic and Electronic Structure Observatory

**Advanced Light Source