AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Monday Sessions
       Session GR+EM+ET+NS+TF-MoA

Paper GR+EM+ET+NS+TF-MoA6
Study of Impurity-Induced Inelastic Scattering on Suspended Graphene by Scanning Confocal Micro-Raman Spectroscopy

Monday, October 29, 2012, 3:40 pm, Room 13

Session: Electronic Properties and Charge Transport
Presenter: L.W. Huang, Academia Sinica, Taiwan, Republic of China
Authors: L.W. Huang, Academia Sinica, Taiwan, Republic of China
C.S. Chang, Academia Sinica, Taiwan, Republic of China
Correspondent: Click to Email
We utilized a polymer-based procedure to transfer the CVD-grown graphene onto a TEM copper grid. The heat treatment was performed on the graphene membrane in an argon/ hydrogen (Ar/H2) atmosphere at 400 ℃. After the transfer and heat treatment, TEM images, acquired by an ultra-high-vacuum transmission electron microscopy (UHV-TEM), demonstrated areas with distinguishable impurity distribution on the suspended graphene membrane. These areal impurity distributions can also be mapped by the scanning Raman spectroscopy correspondingly, indicating the influence of impurity-induced inelastic scattering. The results of this experiment show that the intensity ratio of Raman spectra 2D band over G band (I2D/IG) is proportional to minus fourth power of the inelastic scattering rate.