| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Monday Sessions |
| Session GR+EM+ET+NS+TF-MoA |
| Session: | Electronic Properties and Charge Transport |
| Presenter: | L. Zhang, University of Science and Technology of China, Advanced Light Source |
| Authors: | L. Zhang, University of Science and Technology of China, Advanced Light Source J.H. Guo, Advance Light Source J.F. Zhu, University of Science and Technology of China |
| Correspondent: | Click to Email |
The synthesis of graphene on metal surfaces by chemical vapor deposition (CVD) is the most promising method to prepare single-layer and large-area graphene, which is a prerequisite for the fabrication of graphene-based electronic devices. Therefore, the graphene/metal interfaces have attracted much attention due to their importance in graphene synthesis by CVD processes. In this presentation, we report our recent studies on the electronic structure and band dispersion of graphene on different metal surfaces (Cu, Ir and Ni) by the means of X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS). The XAS spectra for graphene on metal surfaces show strong π* and σ* resonant features, indicating that the single-layer graphene films preserve the intrinsic symmetry of graphite. The resonant XES spectra of graphene on different metal surfaces change dramatically, especially for the features of π* resonances, which can be directly related to the different strength of hybridization between graphene and metal substrates. These significant spectra changes have been proved to be an effective measure for the bonding strength of graphene on different substrates: strong band dispersion can be observed when the interaction between graphene and metal substrate is weak (such as Cu), while the band dispersion is seriously disturbed when a strong hybridization between graphene and metal substrate (such as Ni) exists. These results provide basic understanding of graphene/metal interfacial interaction, which helps to develop graphene-based electronic devices with high performances.