| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Friday Sessions |
| Session GR+EM+ET+MS+NS-FrM |
| Session: | Graphene Device Physics and Applications |
| Presenter: | J.S. Moon, HRL Laboratories LLC |
| Authors: | J.S. Moon, HRL Laboratories LLC H.-C. Seo, HRL Laboratories LLC M. Antcliffe, HRL Laboratories LLC S. Lin, HRL Laboratories LLC A. Schmitz, HRL Laboratories LLC D. Le, HRL Laboratories LLC C. McGuire, HRL Laboratories LLC D. Zehnder, HRL Laboratories LLC L.O. Nyakiti, Naval Research Laboratory V.D. Wheeler, Naval Research Laboratory R.L. Myers-Ward, Naval Research Laboratory C.R. Eddy, Jr., Naval Research Laboratory D.K. Gaskill, Naval Research Laboratory P.M. Campbell, Naval Research Laboratory K.-M. Lee, UC San Diego P. Asbeck, UC San Diego |
| Correspondent: | Click to Email |
Graphene is a topic of very active research from basic science to potential applications. Various RF circuit applications are under evaluation, which include low-noise amplifiers, frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with CMOS compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene MOSFETs to minimize parasitics and improve gate modulation efficiency in the channel. In this presentation, we highlight recent progress in graphene materials and devices. For example. with hydrogen intercalation, a graphene wafer showed an electron mobility of 2500 cm2/Vs at 6.8 x 1012 /cm2 carrier density, and sheet resistance of 230 ohm/square. The Ti-based ohmic contact resistance is below 100 ohm*µm and hysteresis in HfO2/Graphene MOSFET transfer curves are no longer concerns in RF applications. We will show graphene MOSFETs in mixer and detector applications with performances comparable to and better than the current state-of-the-art technologies. Also, we will present recent process in graphene heterostructure based diodes with on/off ratio greater than 106. In summary, while graphene is relatively new material, it shows a strong potential to become disruptive in RF applications.
This work was partially supported by DARPA, monitored by Dr. J. Albrecht, under SPAWAR contract number N66001-08-C-2048.
The views, opinions, and/or findings contained in this article/presentation are those of the author/presenter and should not be interpreted as representing the official views or policies, either expressed or implied, of the Defense Advanced Research Projects Agency or the Department of Defense.
[1] J. S. Moon and D. K. Gaskill, IEEE Trans. Microwave Theory and Techniques, p. 2702, 2011