AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Friday Sessions
       Session GR+EM+ET+MS+NS-FrM

Paper GR+EM+ET+MS+NS-FrM11
High Efficiency Graphene Solar Cells by Chemical Doping

Friday, November 2, 2012, 11:40 am, Room 13

Session: Graphene Device Physics and Applications
Presenter: X. Miao, University of Florida
Authors: X. Miao, University of Florida
S. Tongay, University of Florida
M.K. Petterson, University of Florida
K. Berke, University of Florida
A.G. Rinzler, University of Florida
B.R. Appleton, University of Florida
A.F. Hebard, University of Florida
Correspondent: Click to Email
We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exceeds the native (undoped) device performance by a factor of 4.5 and is the highest PCE reported for graphene-based solar cells to date. Current–voltage, capacitance–voltage, and external quantum efficiency measurements show the enhancement to be due to the doping-induced shift in the graphene chemical potential that increases the graphene carrier density (decreasing the cell series resistance) and increases the cell’s built-in potential (increasing the open circuit voltage) both of which improve the solar cell fill factor.