| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Friday Sessions |
| Session GR+EM+ET+MS+NS-FrM |
| Session: | Graphene Device Physics and Applications |
| Presenter: | M. Lodge, University of Central Florida |
| Authors: | M. Lodge, University of Central Florida M. Ishigami, University of Central Florida |
| Correspondent: | Click to Email |
It is now widely accepted that surface contaminants have large effects on the performance of graphene-based field effect transistors. Various techniques are now available to clean processing residues from graphene, yet some of these techniques are chemically aggressive leaving concerns that they may damage graphene and affect the device performance. In addition, there are no concensus on the best method to produce the cleanest and, therefore, the best graphene devices.
Here, we have performed a study on the impact of various chemical treatments on the performance of field effect transistors fabricated from graphene grown using chemical vapor deposition. By measuring the impact of hydrogen-annealing, oxygen-annealing, and various solvent-based cleaning on 50 graphene field effect transistors, we generate a statistically-significant conclusion on the best cleaning technique for producing the highest performance. We will present our results along with our scanning tunneling microscopy images and Raman spectra to shed a light on the mechanism involved in each cleaning technique.