AVS 59th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Friday Sessions
       Session GR+EM+ET+MS+NS-FrM

Invited Paper GR+EM+ET+MS+NS-FrM1
Heterointegration of Graphene with Nano and Molecular Scale Structures for High Performance Devices

Friday, November 2, 2012, 8:20 am, Room 13

Session: Graphene Device Physics and Applications
Presenter: X. Duan, University of California, Los Angeles
Correspondent: Click to Email

Nanoscale integration of dissimilar materials with distinct compositions, structures and properties has the potential to create a new generation of integrated systems with unique functions and/or unprecedented performance to break the boundaries of traditional technologies. In this talk, I will focus my discussion on the heterointegration of graphene with a variety of nano and molecular scale structures of designed architectures to open up exciting opportunities for nanoscale device egineering. In particular, I will discuss our recent effort in integrating graphene with a self-aligned nanowire gate to create the highest speed graphene transistors, integrating graphene with plasmonic nanostructures to create multi-color high speed photodetectors, integrating graphene with nanoscale templates for the creation of graphene nanostructures, and integrating graphene with various π-conjugating molecular systems for band gap engineering and molecular sensing.