| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Wednesday Sessions |
| Session GR+AS+EM+NS+SS-WeA |
| Session: | Dopants and Defects in Graphene; Graphene Interfaces with Other Materials |
| Presenter: | I.I. Oleynik, University of South Florida |
| Authors: | L. Adamska, University of South Florida I.I. Oleynik, University of South Florida |
| Correspondent: | Click to Email |
Recent developments in graphene electronics have stimulated an interest in other two dimensional materials such as hexagonal boron nitride (BN) and molybdenum disulfide (MoS2). In contrast to graphene, BN and MoS2 possess appreciable band gap and may form good interfaces with graphene, which opens up exciting opportunities for development of novel nanoelectronic devices. For practical applications, it is important to understand the effect of defects, which appear during growth and processing, on resulting electronic properties. The defects in graphene, BN, MoS2 and their heterostructures have been investigated by first-principles density functional theory. Their effect on electronic properties including density of states and simulated STM images will be discussed.