| AVS 59th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Wednesday Sessions |
| Session GR+AS+EM+NS+SS-WeA |
| Session: | Dopants and Defects in Graphene; Graphene Interfaces with Other Materials |
| Presenter: | A.T. N'Diaye, Lawrence Berkeley National Laboratory |
| Authors: | A.T. N'Diaye, Lawrence Berkeley National Laboratory J. Coraux, Institut NÉEL, CNRS & Université Joseph Fourier, France N. Rougemaille, Institut NÉEL, CNRS & Université Joseph Fourier, France C. Vo-Van, Institut NÉEL, CNRS & Université Joseph Fourier, France O. Fruchart, Institut NÉEL, CNRS & Université Joseph Fourier, France A.K. Schmid, Lawrence Berkeley National Laboratory |
| Correspondent: | Click to Email |
With spin polarized low energy electron microscopy (SPLEEM) we studied thickness dependent spin reorientation transition on this system and compare with Co/Ir(111) without graphene. Monitoring the spin orientation in three dimensions while increasing the film thicknes by one ML at a time, we find that the presence of graphene on the film at least doubles the thickness at which the spin reorientation from out-of-plane to in-plane occurs from 6ML Co to transition to 12ML-13ML at 300°C and to between 14ML and 20ML at room temperature.
We attribute the significant contribution of the graphene/Cobalt interface to the magnetic anisotropy energy to a strong hybridization of graphene with Cobalt in directional bonds.
This work was supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231, by the French ANR contract ANR-2010-BLAN-1019-NMGEM and by the Alexander von Humboldt Foundation.