AVS 59th Annual International Symposium and Exhibition
    Electron Transport at the Nanoscale Focus Topic Thursday Sessions
       Session ET+SS+GR+SP-ThA

Paper ET+SS+GR+SP-ThA9
Transport and Mechanical Properties of Molecular Junctions formed by Acetophenon Deposited on Si (100) Surface

Thursday, November 1, 2012, 4:40 pm, Room 16

Session: Electron Transport at the Nanoscale: Molecules and Defects
Presenter: O. Krejci, Institute of Physics of ASCR, Czech Republic
Authors: M. Setvin, Institute of Physics of ASCR, Czech Republic
Z. Majzik, Institute of Physics of ASCR, Czech Republic
O. Krejci, Institute of Physics of ASCR, Czech Republic
P. Hapala, Institute of Physics of ASCR, Czech Republic
P. Jelinek, Institute of Physics of ASCR, Czech Republic
Correspondent: Click to Email

One of the main challenges of Molecular electronics is to understand and control charge transfer through a reproducible single molecule contact between electrodes. Most investigations of electron transport through molecules have been performed in “blind” junction experiments, where the molecular conformation and contact geometry cannot be probed. Therefore large gaps in our knowledge remains since in molecular electronics the atomic-scale structure of the entire junction including the leads is important for its conductance properties.
Our goal is to study electrical transport through well-defined molecular junction on semiconductor surfaces. Formation of molecular junctions using organic molecules on semiconductor surfaces might lead to interesting phenomena. For example, the presence of the band gap in electrodes can lead to the negative differential resistance observed in transport through molecules bonded to dangling-bond sites[1].
In this contribution, we investigate formation of molecular junction consisting of a single acetophenone molecule deposited on Si(100) surface in upright position by means of simultaneous AFM/STM measurements and DFT calculations. We used a modified UHV VT STM/AFM Omicron machine allowing simultaneous acquisition of the current and forces with atomic resolution using a tuning fork sensor[2]. The simultaneous acquisition of the tunneling current and force during tip approach allows precise control of contact formation and its consequence on the charge transport through molecular junction[3]. On other hand, DFT simulations provide more insight into interaction mechanism between probe and molecule. It also helps to understand induced structural and electronic relaxations during tip approach.
References
[1] T. Rakshit et al. Nanoletters 4, 1803−1807 (2004).
[2] Z. Majzik et al, Beilstein J. Of Nanotech. 3, 249 (2012).
[3] N. Fournier et al Phys. Rev. B 84, 035435 (2011).