AVS 59th Annual International Symposium and Exhibition
    Electron Transport at the Nanoscale Focus Topic Friday Sessions
       Session ET+SS+GR+SP-FrM

Invited Paper ET+SS+GR+SP-FrM7
Electronic Transport on the Nanoscale

Friday, November 2, 2012, 10:20 am, Room 16

Session: Electron Transport at the Nanoscale: Development of Theories and Techniques
Presenter: R. Moeller, University of Duisburg-Essen, Germany
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To study the transport through objects at the nanoscale a scanning tunneling microscope with several tips is used. Two different configurations will be discussed. The lateral transport of electrons may be studied by using two tips to drive a current parallel to the surface. A third tip enables to map the corresponding electrochemical potential. Measurements for a 2D conducting layer will be discussed. To analyze the transport perpendicular to the surface, a thin metallic layer is placed on a semiconducting surface. At the interface a Schottky barrier is formed, which can only be overcome by electrons of sufficient energy. This may be used to split the current of electrons coming from the tip of the microscope into two parts, the ballistic electrons and the electrons which have been scattered. This technique has been applied to study the ballistic transport of electrons through individual molecules. On the other hand inelastic processes may be revealed by analyzing the fluctuations in the tunneling current observed at different positions of the tunneling tip above an adsorbed molecule.