AVS 59th Annual International Symposium and Exhibition
    Energy Frontiers Focus Topic Thursday Sessions
       Session EN-ThP

Paper EN-ThP2
F-doped ZnO Thin Films Deposited by Pulse DC Magnetron Sputtering of Zinc Target

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Energy Frontiers Poster Session
Presenter: B.-H. Liao, Instrument Technology Research Center, Taiwan, Republic of China
Correspondent: Click to Email
In this study, Fluorine doped ZnO (FZO) films were deposited on glass substrate by pulse DC magnetron sputtering of zinc targets with Ar , H2 , O2 and CF4 containing gas mixtures at room temperature. Increasing CF4 gas in ZnO films can increase the carrier concentrations but slightly decrease the mobility. After introducing 1 sccm CF4 gas in ZnO films we can get the lowest resistivity 7.6×10-4 (Ω-cm) with mobility 12.4 cm2/V-s and carrier concentrations 6.6×1020cm-3.Besides, its average transmittance in the visible region was over 82.95%. All of the results indicate that we have found a cost effective and mass production process suitable for the application of manufacture in the real-world industry.