CIGS can be prepared single phase in a large range of Cu-poor compositions. When prepared under Cu-excess a secondary phase of Cu selenide is formed which can be etched. Record solar cells as well as commercial modules are prepared from Cu-poor absorbers. However, the transport and recombination properties of material prepared under Cu-excess are superior. It has been known that the interface in cells with absorbers prepared under Cu-excess leads to increased recombination and thus limits the efficiency. The properties of the surface of CIGS absorbers prepared under Cu-excess is not well understood so far. We are preparing solar cells with absorbers grown under Cu-excess, where we make the surface Cu-poor to get the best from both worlds.