AVS 59th Annual International Symposium and Exhibition
    Energy Frontiers Focus Topic Monday Sessions
       Session EN+TF-MoA

Paper EN+TF-MoA10
Plasma Assisted Synthesis of Pyrite Absorbers

Monday, October 29, 2012, 5:00 pm, Room 15

Session: Chalcogenide Solar Cells I
Presenter: C.A. Wolden, Colorado School of Mines
Authors: R. Morrish, Colorado School of Mines
R. Silverstein, Colorado School of Mines
C.A. Wolden, Colorado School of Mines
Correspondent: Click to Email

Pyrite (FeS2) is a non-toxic, earth abundant chalcogenide with desirable characteristics for application as a photovoltaic absorber including a modest band gap of 0.95 eV and a large optical absorption coefficient (>105 cm-1). Although theoretically capable of >20% efficiency, to date pyrite devices have displayed poor performance. One key challenge has been the production of stoichiometric material that is free of impurity phases. Conventional approaches employ thermal sulfurization of iron-based films or precursors. These routes inherently produce contaminate phases (troilite, pyrrhotite, marcasite), that once formed, are difficult to completely remove. Thermodynamics suggests that hematite (α-Fe2O3) may be directly converted to pyrite in the presence of sufficiently high sulfur activity. In this work, we demonstrate pyrite synthesis using a H2S plasma to sulfurize hematite nanorods produced using chemical bath deposition. Conversion to pyrite was achieved by exposure to a 90% Ar-10% H2S plasma at moderate temperature (350 - 450 °C). The application of plasma dramatically enhances both the rate of conversion and the quality of the resulting material. Composition analysis using both Raman and X-ray photoelectron spectroscopy confirm that the resulting pyrite is free of common impurity phases. The degrees of sulfur incorporation could be precisely controlled by plasma exposure, and the apparent optical band gap could be systematically reduced from 2.2 to 1.0 eV. Electron microscopy images showed the surface maintained a nanostructured architecture following sulfurization, and a 150 nm thick film was sufficient to absorb 99% of incident visible light. In this presentation we discuss the kinetics of this solid state transformation, as well as report on the optoelectronic properties of these materials.