| AVS 59th Annual International Symposium and Exhibition | |
| Energy Frontiers Focus Topic | Monday Sessions |
| Session EN+NS-MoM |
| Session: | Nanostructured Solar Cells |
| Presenter: | K.J. Kim, Korea Research Institute of Standards and Science (KRISS), Republic of Korea |
| Authors: | K.J. Kim, Korea Research Institute of Standards and Science (KRISS), Republic of Korea J.H. Park, Korea Research Institute of Standards and Science (KRISS), Republic of Korea H.-J. Baek, University of Science and Technology (UST), Republic of Korea H.H. Hwang, University of Science and Technology (UST), Republic of Korea J.S. Jang, Chungbuk National University (CBNU), Republic of Korea |
| Correspondent: | Click to Email |
Si quantum dots (QDs) imbedded in a SiO2 matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material SiO2 is an additional source of the low conductivity.
Active doping of B in Si nano structures and the effect of internal polycrystalline bridge layer were investigated by secondary ion mass spectroscopy (SIMS) depth profiling analyses. Phosphorous and boron doped-Si / SiO2 multilayers on Si wafers were fabricated by ion beam sputtering deposition as a model structure for the study of the diffusion behavior of the dopants. The distributions of the dopants after annealing at high temperatures were analyzed by SIMS depth profiling analyses.
In this study, the diffusion behaviors of various dopants in silicon nanostructures will be discussed and the effects of the various parameters for the improvement of conversion efficiency in Si quantum dot solar cell will be introduced.