AVS 59th Annual International Symposium and Exhibition
    Electronic Materials and Processing Monday Sessions
       Session EM+TF+OX+GR-MoM

Invited Paper EM+TF+OX+GR-MoM1
Surface Preparation and Dielectric Growth for Graphene-based Devices

Monday, October 29, 2012, 8:20 am, Room 009

Session: High-k Dielectrics for MOSFETs I
Presenter: R.M. Wallace, University of Texas at Dallas
Correspondent: Click to Email
In addition to interesting physics, numerous device applications are under investigation for graphene. Many of these devices require an interaction of graphene with dielectrics, and require a thorough understanding of the graphene/dielectric interface. As practical device applications require large area graphene, CVD methods have been employed to synthesize graphene and typically involve a wet chemical transfer process, which can leave residues that impact device behavior. This talk will review recent progress in the investigation of CVD graphene growth, transfer and dielectric growth processes with an emphasis on in-situ studies of the surfaces produced by these processes and the resultant electrical behavior. This work is supported by the NRI SWAN Center.